TUNNELING
through NIOBIUMPENTOXIDE and NIOBIUM
OXIDATION.
J.Halbritter
Forschungszentrum Karlsruhe,
IHM
72
KARLSRUHE
Tunnelling
through nanocrystalline Nb2O5-y is not only crucial for
cryo electronics but also for Cabrera Mott oxidation of Nb and, therewith, for
the dielectric surface impedance ZE. In the talk it will be
elaborated how oxidation deteriorates the superconducting Nb depending on
defects, i.e., why thin films show severe ZB(B) deterioration being
minimal in single crystals, and how different oxides change ZE(E),
i.e., the high field Q-drop. The physics and material science behind is
summarized in the abstract below.
Niobium
oxides consists of edge connected {NbO6} octahedra blocks (CB, size
by 3 –5 {NbO6} about nm², stoichiometry Nb6+) with ΦB
= Ec – EF ≃ 1 eV as
difference between conduction band EC and Fermi energy EF.
The CB’s are bordered by side connected {NbO6} octahedra with ΦS≃ 0.1 eV, named, crystallographic shear planes (CS). By nonlocal charge
transfer CS’s yield the correct stoichiometry Nb5+ in average. As
common defect in Nb2O5-y O-vacancies populated by an
electron pair pin EF 1 eV below EC of CB yielding as
density of localized states nL ≃1020 -1019/cm3, mostly defect complexes
Nb4+V0Nb4+ at CS, easing the tunnel and hopping
charge transport. Hence, Cabrera Mott electrons tunneling to the adsorbed air O2
by the Nb–O binding energy of 5eV, charge O up and the potential (≲ 5V) across the Nb2O5-y
layer drives O2- towards the metallic NbOx (x ≲1) interface speeded up by CS O vacancies. There new CB may be nucleated
if the volume expansion by a factor 3 is possible, e.g., at nuclei releasing
the strain. If the release is retarded, as in the case of the hard NbN or of
defect free Nb single crystals one obtains very thin Nb2O5-y (≲ nm) oxide coatings, which are dominated by ΦB and nL
≪ 1019/cm3. Below the
metallic NbOx(x ≲1)-interface injected O exists in
solid solution and, defects adjacent to Nb surfaces, nucleate strain release
yielding crack corrosion, i.e., segregation by Nb-d-bonds into Nb2O5-y
filled weak links and into NbOx(x≃0.02). Those segregates are injected up to depths of 0.1 – 50µm, depending on oxidizing potential
and nuclei density. Despite this variance, the oxidation still follows the
Cabrera Mott process with the metallic interface oxide NbOx(x ≈1) as anode where the rate depends
on density of nuclei in Nb and density of CS in Nb2O5-y.