TUNNELING through NIOBIUMPENTOXIDE and NIOBIUM  OXIDATION.

 

J.Halbritter

Forschungszentrum Karlsruhe, IHM

72        KARLSRUHE

Germany

 

Tunnelling through nanocrystalline Nb2O5-y is not only crucial for cryo electronics but also for Cabrera Mott oxidation of Nb and, therewith, for the dielectric surface impedance ZE. In the talk it will be elaborated how oxidation deteriorates the superconducting Nb depending on defects, i.e., why thin films show severe ZB(B) deterioration being minimal in single crystals, and how different oxides change ZE(E), i.e., the high field Q-drop. The physics and material science behind is summarized in the abstract below.

Niobium oxides consists of edge connected {NbO6} octahedra blocks (CB, size by 3 –5 {NbO6} about nm², stoichiometry Nb6+) with ΦB = Ec – EF 1 eV as difference between conduction band EC and Fermi energy EF. The CB’s are bordered by side connected {NbO6} octahedra with ΦS 0.1 eV, named, crystallographic shear planes (CS). By nonlocal charge transfer CS’s yield the correct stoichiometry Nb5+ in average. As common defect in Nb2O5-y O-vacancies populated by an electron pair pin EF 1 eV below EC of CB yielding as density of localized states nL 1020 -1019/cm3, mostly defect complexes Nb4+V0Nb4+ at CS, easing the tunnel and hopping charge transport. Hence, Cabrera Mott electrons tunneling to the adsorbed air O2 by the Nb–O binding energy of 5eV, charge O up and the potential (5V) across the Nb2O5-y layer drives O2- towards the metallic NbOx (x 1) interface speeded up by CS O vacancies. There new CB may be nucleated if the volume expansion by a factor 3 is possible, e.g., at nuclei releasing the strain. If the release is retarded, as in the case of the hard NbN or of defect free Nb single crystals one obtains very thin Nb2O5-y (nm) oxide coatings, which are dominated by ΦB and nL 1019/cm3. Below the metallic NbOx(x 1)-interface injected O exists in solid solution and, defects adjacent to Nb surfaces, nucleate strain release yielding crack corrosion, i.e., segregation by Nb-d-bonds into Nb2O5-y filled weak links and into NbOx(x0.02). Those segregates are injected up to depths of 0.1 – 50µm, depending on oxidizing potential and nuclei density. Despite this variance, the oxidation still follows the Cabrera Mott process with the metallic interface oxide NbOx(x 1) as anode where the rate depends on density of nuclei in Nb and density of CS in Nb2O5-y.