MSE 2008, Materials Science and Engineering, 01.09-04.09.2008, Nürnberg


Topic Area D     Characterisation and Modelling


     D16 Modelling and Simulation





Molecular dynamics simulations of the sputtering of beta-SiC by Ar 


Authors & affiliations:

A.P. Prskalo1, C. Kohler1, S. Schmauder1

C. Ziebert2, J. Ye2, S. Ulrich2

1 Institute for Materials Testing, Materials Science and Strength of Materials (IMWF),

University of Stuttgart, Pfaffenwaldring 32, 70569 Stuttgart, Germany

2 Institute for Materials Research I, Forschungszentrum Karlsruhe, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany



Molecular dynamics simulations of the sputtering of cubic silicon carbide (SiC) by Argon atoms are performed using a combination of the Tersoff potential and the Ziegler-Biersack-Littmark (ZBL) potential. The sputter gain is determined as a function of the energy of the incident Ar atoms and the temperature of SiC. Furthermore, the damage caused by collision cascades inside the crystal is investigated. The time evolution of the damaged crystal is studied at different temperatures. The results of the simulations are compared with experiments.