Cubic Boron Nitride Based Metastable Coatings and Nanocomposites

 

J. Ye, S. Ulrich, M. Stüber, C. Ziebert, Forschungszentrum Karlsruhe, Germany

 

The 36th International Conference on Metallurgical Coatings and Thin Films, San Diego, California, 27. April – 1. Mai 2009

Carbon and Nitride Materials: Synthesis-Structure-Property Relationships

Boron Nitride and Carbon Nitride and Group-III (Al, Ga, In) Nitride Materials, Session 28.04.2009

 

Various PVD and plasma-assisted CVD methods presently used for the deposition of cubic boron nitride (c-BN) thin films demand adequate conditions relating to ion bombardment of growing films, growth temperature, film stoichiometry etc. The ion-bombardment conditions, often appearing rather apparatus-specific, can be however well categorized according to the fundamental parameters of bombarding ions as well as condensing neutral particles, namely their energy and flux density. In terms of these fundamental parameters, the mechanisms for the c-BN formation are briefly discussed, along with an evaluation of the available growth models. Due to intensive ion bombardment during deposition, c-BN films are known for their extremely high compressive stress and poor adhesion. The present study focuses then on the magnetron-sputtered, c-BN-based metastable films and nanocomposite films. Under suitable and wellcontrolled growth parameters, the deposited films exhibit microstructures dominated by c-BN phase, while on the other side show considerably reduced internal stresses in comparison to conventional c-BN films. Some examples will be shown, particularly c-BN/a-C nanocomposite and c-BN:O metastable films, including their deposition details, structure and composition characterization (HRTEM, SEM, XRD, XPS, AES, FTIR, etc.), and corresponding mechanical properties (hardness, E-modulus, stress). A film design concept will also be demonstrated as well as its successful realization for well-adherent films consisting of an adhesion promoting base layer, a graded cubic-phase nucleation, and a low-stress, superhard, above 2 μm thick, c-BN-dominated top-layer.